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Enhancing the optoelectronic properties of V2O5 thin films through Tb doping for photodetector applications by Abeer S. Altowyan; Jabir Hakami; H. Algarni; Mohd Shkir is a Materials Science article available to read on EtoBox.

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Using highly economical and scalable nebulizer-aided spray pyrolysis approach, a high-quality terbium (Tb) doped vanadium pentoxide (V 2 O 5 ) thin film-based optical sensor was developed. To investigate the effects of various terbium doping concentrations on its growth and optoelectronic features, the structural properties as well as its elemental composition, surface morphology, photoluminescence, optical, and currentvoltage (I-V) characteristics were examined. An orthorhombic structure with orientation along the (010) plane was found to be existing in the X-ray diffraction pattern of Tb-doped V 2 O 5 thin films with increase in the crystallite size upto 3 % Tb-doped V 2 O 5 films. The prevalence of dense nanorods is observed in all the films while analyzing their micrograph from a field emission scanning electron microscope. Also it is noted that the addition of 3 % Tb dopants increases UV absorption by lowering its energy gap from 2.43 to 2.37 eV. A strong green emission peak at 530 nm and weak UV bands were noted in the PL spectrum due to higher crystalline quality, free from defects and native flaws for the 3% Tb-doped V 2 O 5 . Terbium-doped V 2 O 5 films exhibited elevated

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Author

Abeer S. Altowyan; Jabir Hakami; H. Algarni; Mohd Shkir

Publisher

Elsevier BV

Published

2023

Language

EN

Field

Materials Science (Physical Sciences)