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About this scholarly article
2018 IEEE MTT-S International Microwave and RF Conference (IMaRC) - Impact of Ferroelectric Material Properties on Device Characteristics of Ferroelectric Ge 0.97 Sn 0.03 Double Gate FET (FEGeSnDGFET) by Bansal, Monika; Kaur, Harsupreet is a scholarly article available to read on EtoBox.
- Author
- Bansal, Monika; Kaur, Harsupreet
- Publisher
- IEEE
- Published
- 2018