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2018 IEEE MTT-S International Microwave and RF Conference (IMaRC) - Impact of Ferroelectric Material Properties on Device Characteristics of Ferroelectric Ge 0.97 Sn 0.03 Double Gate FET (FEGeSnDGFET) by Bansal, Monika; Kaur, Harsupreet is a scholarly article available to read on EtoBox.

Author
Bansal, Monika; Kaur, Harsupreet
Publisher
IEEE
Published
2018

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