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Thermal stability of thin InGaN films on GaN by G.T. Thaler; D.D. Koleske; S.R. Lee; K.H.A. Bogart; M.H. Crawford is a Engineering article available to read on EtoBox.
What is Thermal stability of thin InGaN films on GaN about?
The thermal stability of $ 200-nm-thick InGaN thin films on GaN was investigated using isothermal and isochronal post-growth anneals. The In x Ga 1 À x N films (x1⁄4 0.08-0.18) were annealed in N 2 at 600-1000 1C for 15-60 min, and the resulting film degradation was monitored using X-ray diffraction (XRD) and photoluminescence (PL) measurements. As expected, films with higher indium concentration showed more evidence for decomposition than the samples with lower indium concentration. Also for each alloy composition, decreases in the PL intensity were observed starting at much lower temperatures compared to decreases in the XRD intensity. This difference in sensitivity of the PL and XRD techniques to the InGaN decomposition suggest that defects that quench luminescence are generated prior to the onset of structural decomposition. For the higher indium concentration films, the bulk decomposition proceeds by forming metallic indium and gallium regions as observed by XRD. For the 18% indium concentration film, measurement of the temperature-dependent InGaN decomposition yields an activation energy, E A , of 0.87 7 0.07 eV, which is similar to the E A for bulk InN decomposition. The InG
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It is typically read by researchers, students, and practitioners in Engineering.
- Author
- G.T. Thaler; D.D. Koleske; S.R. Lee; K.H.A. Bogart; M.H. Crawford
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)