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About this Engineering article
Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization by C.D. Young; D. Veksler; S. Rumyantsev; J. Huang; H. Park; W. Taylor; M. Shur; G. Bersuker is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C.D. Young; D. Veksler; S. Rumyantsev; J. Huang; H. Park; W. Taylor; M. Shur; G. Bersuker
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)