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Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine) by Ramesh Gayathri; Varghese Maria Angela; Panneerselvam Devibala; Predhanekar Mohamed Imran; Samuthira Nagarajan is a Engineering article available to read on EtoBox.

What is Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine) about?

To better understand the structure−property relationship and the significance of the donor−acceptor (D−A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A-and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 10 4 , and the fluorophenyl substitution exhibited the lowest threshold voltage of −1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital−lowest unoccupied molecular orbital energ

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Author

Ramesh Gayathri; Varghese Maria Angela; Panneerselvam Devibala; Predhanekar Mohamed Imran; Samuthira Nagarajan

Publisher

American Chemical Society (ACS)

Published

2023

Language

EN

Field

Engineering (Physical Sciences)