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Physics of dynamic threshold voltage and steep subthreshold swing in Al2O3–InAlN–GaN MOSHEMTs by Zhou, Q; Wang, Z H; Zhou, X Y; Zhang, A B; Shi, Y Y; Liu, L; Wang, Y G; Fang, Y L; Lv, Y J; Feng, Z H; Zhang, B is a Engineering article available to read on EtoBox.

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Author
Zhou, Q; Wang, Z H; Zhou, X Y; Zhang, A B; Shi, Y Y; Liu, L; Wang, Y G; Fang, Y L; Lv, Y J; Feng, Z H; Zhang, B
Publisher
Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
Published
2016
Field
Engineering (Physical Sciences)