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Proton-induced SEU in SiGe digital logic at cryogenic temperatures by Akil. K. Sutton; Kurt Moen; John D. Cressler; Martin A. Carts; Paul W. Marshall; Jonathan A. Pellish; Vishwa Ramachandran; Robert A. Reed; Michael L. Alles; Guofu Niu is a Engineering article available to read on EtoBox.
What is Proton-induced SEU in SiGe digital logic at cryogenic temperatures about?
We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63 MeV proton environment at cryogenic temperatures. A 3Â increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300 K to 77 K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50 Mbit/s to 4 Gbit/s. Single-bit-errors dominate the protoninduced SEU response at both 300 K and 77 K, as opposed to the multiple-bit-errors seen in the heavyion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2 D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton-induced SEU at both 300 K and 77 K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-
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- Author
- Akil. K. Sutton; Kurt Moen; John D. Cressler; Martin A. Carts; Paul W. Marshall; Jonathan A. Pellish; Vishwa Ramachandran; Robert A. Reed; Michael L. Alles; Guofu Niu
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)