About this document
Quantum Effects in DMQG MOSFETs Analysis by Vishu Rao is a document available to read on EtoBox.
In this work, an analytical model of subthreshold characteristics for an ultrathin dual-metal quadruple gate MOSFET has been developed by considering the quantum confinement effects. The 3D Poisson’s and 2D Schrödinger’s equations have been solved analytically to obtain the threshold voltage and subthreshold current of ultrathin dual-metal quadruple gate MOSFET with a minimum cross-section of 3 nm×3 nm. The integrated charge at the threshold condition is obtained by considering minimum sub-band energy level
- Author
- Vishu Rao
- Language
- EN