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Can I read Passivation of III-V compounds used for metal-insulator-InP(100) structures on EtoBox?
Passivation of III-V compounds used for metal-insulator-InP(100) structures by Bideux, L.; Merle, S.; Robert, C.; Gruzza, B.; Benamarra, Z.; Tizi, S.; Chellali, M. is a Engineering article available to read on EtoBox.
What is Passivation of III-V compounds used for metal-insulator-InP(100) structures about?
Alumina was evaporated on InP(100) and InSb/InP(100) substrates. The InSb bu †er layer permits thermal and structural protection of the indium phosphide substrate. This layer was obtained by condensation of antimony atoms on the indium-rich InP surface after ionic etching. The evaporation of antimony leads to Sb-In bonds. Modellization of the Auger signal variations during alumina condensation was compared to the experimental results. Auger measurements indicate the improvement of the elaborated structure. This fact has been conÐrmed by the electrical C(V) characterizations. 1998
Who reads Passivation of III-V compounds used for metal-insulator-InP(100) structures?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Bideux, L.; Merle, S.; Robert, C.; Gruzza, B.; Benamarra, Z.; Tizi, S.; Chellali, M.
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)