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About this Materials Science article
Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method by Tian, Yuan; Zhang, Lei; Wu, Yongzhong; Shao, Yongliang; Dai, Yuanbin; Zhang, Haodong; Wei, Rusheng; Hao, Xiaopeng is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Tian, Yuan; Zhang, Lei; Wu, Yongzhong; Shao, Yongliang; Dai, Yuanbin; Zhang, Haodong; Wei, Rusheng; Hao, Xiaopeng
- Publisher
- Royal Society of Chemistry; The Royal Society of Chemistry; Royal Society of Chemistry (RSC) (ISSN 1466-8033)
- Published
- 2014
- Language
- EN
- Field
- Materials Science (Physical Sciences)