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Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching by Tilghman L Rittenhouse; Paul W Bohn; Ilesanmi Adesida is a Physics and Astronomy article available to read on EtoBox.

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A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction of a chemical oxidant, which combined with UV illumination injects holes into the valence band, the holes subsequently participating in the oxidation and dissolution of the substrate. The etchant is composed of HF and K 2 S 2 O 8 in water. Various porous morphologies are presented as a function of etchant concentration, time of etching, and SiC polytype. Wafer quality is of the utmost concern when utilizing the electroless wet etchant, since defects such as stacking faults, dislocations, and micropipes have a large impact on the resulting porous structure. Results of imaging and spectroscopic characterization indicate that the porous morphologies produced in this manner should be useful in producing sensors and porous substrates for overgrowth of low dislocation density epitaxial material.

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Author

Tilghman L Rittenhouse; Paul W Bohn; Ilesanmi Adesida

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

2003

Language

EN

Field

Physics and Astronomy (Physical Sciences)