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The document presents the development of the first GaN on Si monolithic microwave integrated circuit (MMIC), achieving a pulsed output power of 25 W with 15 dB gain at 10 GHz. The MMIC was fabricated using a 2-stage design on a 4-inch GaN on Si substrate, demonstrating the potential for cost-effective high power amplifiers in microwave applications. The results indicate that GaN on Si technology can deliver improved performance and efficiency compared to traditional GaAs materials.
- Author
- 2uejf
- Language
- EN