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About this Engineering article
(Invited) ScAlN: A Novel Barrier Material for High Power GaN-Based RF Transistors by Hardy, Matthew T.; Downey, Brian P.; Nepal, Neeraj; Storm, David F.; Katzer, D. Scott; Meyer, David J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hardy, Matthew T.; Downey, Brian P.; Nepal, Neeraj; Storm, David F.; Katzer, D. Scott; Meyer, David J.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2017
- Language
- EN
- Field
- Engineering (Physical Sciences)