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About this Physics and Astronomy article
Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs by Yoshikawa, M.; Kai, T.; Amano, M.; Kitagawa, E.; Nagase, T.; Nakayama, M.; Takahashi, S.; Ueda, T.; Kishi, T.; Tsuchida, K.; Ikegawa, S.; Asao, Y.; Yoda, H.; Fukuzumi, Y.; Nagahara, K.; Numata, H.; Hada, H.; Ishiwata, N.; Tahara, S. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Yoshikawa, M.; Kai, T.; Amano, M.; Kitagawa, E.; Nagase, T.; Nakayama, M.; Takahashi, S.; Ueda, T.; Kishi, T.; Tsuchida, K.; Ikegawa, S.; Asao, Y.; Yoda, H.; Fukuzumi, Y.; Nagahara, K.; Numata, H.; Hada, H.; Ishiwata, N.; Tahara, S.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2005
- Field
- Physics and Astronomy (Physical Sciences)