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Electron Mobility in GaN/AlGaN QW Transistors by Maddi Pravallika is a document available to read on EtoBox.
This document summarizes research on electron mobility in asymmetric GaN/AlGaN quantum well transistor structures and the effect of alloy disorder scattering. The researchers analyze the electron mobility considering the potential profile from polarization and surface electron density. At low temperatures, mobility is governed by alloy disorder and interface roughness scattering. Increasing surface electron density initially increases mobility, but above 0.6×1013 cm-2 it decreases due to alloy disorder scat
- Author
- Maddi Pravallika
- Language
- EN