About this scholarly article

2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage by Ishiwaki, Seiya; Iwaki, Toshihiro; Sugihara, Yusuke; Nanamori, Kimihiro; Yamamoto, Masayoshi is a scholarly article available to read on EtoBox.

Author

Ishiwaki, Seiya; Iwaki, Toshihiro; Sugihara, Yusuke; Nanamori, Kimihiro; Yamamoto, Masayoshi

Publisher

IEEE

Published

2017