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This dissertation examines junction barrier Schottky (JBS) rectifiers in silicon carbide. JBS rectifiers combine the advantages of Schottky and PiN diode structures. The author fabricated and tested JBS and Schottky diodes on silicon carbide wafers with blocking voltages ranging from 600-3300V. Results showed JBS diodes could withstand higher blocking voltages than comparable Schottky diodes and had higher blocking yields, especially on wafers with poor Schottky contact properties. The author derived design
- Author
- Kawsar Mobin
- Language
- EN