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Process-induced modification to the surface of crystalline GaAs measured by photometry by T.A Briantseva; Z.M Lebedeva; I.A Markov; T.J Bullough; D.V Lioubtchenko is a Materials Science article available to read on EtoBox.

What is Process-induced modification to the surface of crystalline GaAs measured by photometry about?

The photometric chemical analysis technique was used to evaluate the non-interconnected Ga and As produced at the surface of crystalline GaAs by typical processes of semiconductor technology including ultrasonic vibrations, dc and microwave heating and thermal annealing. It is shown that such low energy treatments considerably change the amount of 'free' Ga and As measured by photometry. The preferred mechanism seems to be point defect motion, which stimulate creeping effects as a result of the absorbed energy.

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Author

T.A Briantseva; Z.M Lebedeva; I.A Markov; T.J Bullough; D.V Lioubtchenko

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

1999

Language

EN

Field

Materials Science (Physical Sciences)