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About this Physics and Astronomy article
High Frequency and Noise Model of Gate-all-around Metal-oxide-semiconductor Field-effect Transistors by Nae, B.; Lazaro, A.; Iniguez, B. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Nae, B.; Lazaro, A.; Iniguez, B.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2009
- Field
- Physics and Astronomy (Physical Sciences)