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About this Physics and Astronomy article
Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors by Rumyantsev, S. L.; Pala, N.; Shur, M. S.; Gaska, R.; Levinshtein, M. E.; Khan, M. Asif; Simin, G.; Hu, X.; Yang, J. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Rumyantsev, S. L.; Pala, N.; Shur, M. S.; Gaska, R.; Levinshtein, M. E.; Khan, M. Asif; Simin, G.; Hu, X.; Yang, J.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2001
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)