About this scholarly article

2012 Third International Conference on Intelligent Systems Modelling and Simulation - Effect of Gate Insulator Thickness on Characteristics of Normally-off GaN MOSFETs by Jung, Sung-Dal; Kwon, Mi-Kyung; Kim, Ryun-Hwi; Won, Chul-Ho; Jang, Kyu-Il; Kim, Ki-Won; Im, Ki-Sik; Kim, Dong-Seok; Kang, Hee-Sung; Kang, Shin-Won; Lee, Jung-Hee; Kwon, Dae-Hyuk is a scholarly article available to read on EtoBox.

Author

Jung, Sung-Dal; Kwon, Mi-Kyung; Kim, Ryun-Hwi; Won, Chul-Ho; Jang, Kyu-Il; Kim, Ki-Won; Im, Ki-Sik; Kim, Dong-Seok; Kang, Hee-Sung; Kang, Shin-Won; Lee, Jung-Hee; Kwon, Dae-Hyuk

Publisher

IEEE

Published

2012

Language

EN