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About this Engineering article
On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology by Cardoso, Adilson S.; Omprakash, Anup P.; Chakraborty, Partha Sarathi; Karaulac, Nedeljko; Fleischhauer, David M.; Ildefonso, Adrian; Zeinolabedinzadeh, Saeed; Oakley, Michael A.; Bantu, Tikurete G.; Lourenco, Nelson E.; Cressler, John D. is a Engineering article available to read on EtoBox.
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- Author
- Cardoso, Adilson S.; Omprakash, Anup P.; Chakraborty, Partha Sarathi; Karaulac, Nedeljko; Fleischhauer, David M.; Ildefonso, Adrian; Zeinolabedinzadeh, Saeed; Oakley, Michael A.; Bantu, Tikurete G.; Lourenco, Nelson E.; Cressler, John D.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2015
- Field
- Engineering (Physical Sciences)