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High-Mobility β-Ga2O3 Drift Layers by Ayesha is a document available to read on EtoBox.
What is High-Mobility β-Ga2O3 Drift Layers about?
The document reports on the growth of low-background carrier density β-Ga2O3 thick drift layers with high mobilities using MOCVD, achieving mobilities of up to 190 cm2/V.s and thicknesses of 6.3 μm. It discusses the effects of growth conditions on carrier density and mobility, highlighting the successful fabrication of vertical Schottky barrier diodes with high rectification ratios and breakdown measurements. The study emphasizes the potential of these films for efficient high-voltage vertical power devices
- Author
- Ayesha
- Language
- EN