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This document discusses a technique for reducing leakage current in hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) through ultraviolet (UV) laser illumination, achieving an 85% reduction in leakage current. The study analyzes the physical mechanisms behind this reduction, including changes in trap states and shifts in the Fermi level due to UV exposure. The findings indicate that UV illumination can effectively enhance the performance of a-Si:H TFTs, making it a viable method for industr

Author

kotozomo

Language

EN