About this scholarly article

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy by Sakamoto, Takuro; Ohashi, Takumi; Matsuura, Kentaro; Muneta, Iriya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Suzuki, Yuuta; Ikarashi, Nobuyuki; Wakabayashi, Hitoshi is a scholarly article available to read on EtoBox.

Author

Sakamoto, Takuro; Ohashi, Takumi; Matsuura, Kentaro; Muneta, Iriya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Suzuki, Yuuta; Ikarashi, Nobuyuki; Wakabayashi, Hitoshi

Publisher

IEEE

Published

2018