About this scholarly article

63rd Device Research Conference Digest, 2005. DRC '05. - Enhancement-mode InAlAs/InGaAs/InP HEMTs with Ir-based gate metallization by Kim, S.; Adesida, I.; Hwang,, H. is a scholarly article available to read on EtoBox.

Author

Kim, S.; Adesida, I.; Hwang,, H.

Publisher

IEEE

Published

2005

Language

EN