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What is GaN HEMT Reliability and Failure Mechanisms about?
This paper summarizes evidence for a new failure mechanism in GaN HEMTs under high voltage stress. Defects are generated in the AlGaN barrier near the gate edge due to large mechanical stress induced by the inverse piezoelectric effect. These defects degrade device performance over time. Experimental results support this mechanism, showing degradation is driven by electric field and occurs above a critical voltage. Device designs that reduce electric field enhance reliability against this failure mode.
- Author
- Satyabrata Mahapatra
- Language
- EN