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Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient by Yi Liu; Sufen Wei; Chan Shan; Mingjie Zhao; Shui-Yang Lien; Ming-kwei Lee is a Engineering article available to read on EtoBox.

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A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C. In the vacuum test environment, its room temperature Hall hole concentration is 1.64 × 1017 cm−3, the Hall resistivity is 7.66 Ω cm, the Hall hole mobility is 4.98 cm2 V−1 s−1, and the acceptor ionization energy is 0.087 eV. In addition, the compositions and properties were also extensively investigated. When the oxidation temperature was raised from 900 to 1100 °C, the FWHM of the { 2 ̄ 01}-oriented β-Ga2O3 diffraction peak from the X-ray diffraction (XRD) pattern decreased to 0.237°, confirming an improvement in the crystalline quality of the β-Ga2O3 nanocrystal structure. From both the cross-sectional view of the field emission scanning electron microscopy (FESEM) image and the cross-sectional lamellae prepared by focused ion beam (FIB) milling, it was observed that the generated β-Ga2O3 film transformed into a two-layer morphology when oxidized at 1100 °C. The top layer is a rather loose film composed of nanorods, and the selected area electron diffraction (SAED) pattern of a nanorod confirmed it as high

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Author

Yi Liu; Sufen Wei; Chan Shan; Mingjie Zhao; Shui-Yang Lien; Ming-kwei Lee

Publisher

Elsevier BV

Published

2022

Language

EN

Field

Engineering (Physical Sciences)