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GeO2 Film Growth and Optical Properties by 廣輝李 is a document available to read on EtoBox.
This article reports the successful growth of ultra-wide bandgap GeO2 films on m-plane sapphire substrates using pulsed laser deposition. The resulting films exhibit a rutile structure with an ultra-wide bandgap of approximately 5.1 eV and demonstrate promising optical properties, including high transparency and photoluminescence. These findings suggest potential applications for GeO2 films in power and optoelectronic devices.
- Author
- 廣輝李
- Language
- EN