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About this Engineering article
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy by Weeks, T. Warren; Bremser, Michael D.; Ailey, K. Shawn; Carlson, Eric; Perry, William G.; Piner, Edwin L.; El-Masry, Nadia A.; Davis, Robert F. is a Engineering article available to read on EtoBox.
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- Author
- Weeks, T. Warren; Bremser, Michael D.; Ailey, K. Shawn; Carlson, Eric; Perry, William G.; Piner, Edwin L.; El-Masry, Nadia A.; Davis, Robert F.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP); Research Square (ISSN 0884-2914)
- Published
- 1996
- Field
- Engineering (Physical Sciences)