Opening book details…
About this Engineering article
Interface State in Metal–Oxide–Nitride–Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress by Fujii, Shosuke; Fujitsuka, Ryota; Sekine, Katsuyuki; Koyama, Masato; Yasuda, Naoki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Fujii, Shosuke; Fujitsuka, Ryota; Sekine, Katsuyuki; Koyama, Masato; Yasuda, Naoki
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2012
- Language
- EN
- Field
- Engineering (Physical Sciences)