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Stoichiometry effects and the Moss–Burstein effect for InN by K. S. A. Butcher; H. Hirshy; R. M. Perks; M. Wintrebert-Fouquet; P. P-T. Chen is a Materials Science article available to read on EtoBox.

What is Stoichiometry effects and the Moss–Burstein effect for InN about?

## Abstract We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band‐gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Stoichiometry effects and the Moss–Burstein effect for InN?

Author

K. S. A. Butcher; H. Hirshy; R. M. Perks; M. Wintrebert-Fouquet; P. P-T. Chen

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2006

Language

EN

Field

Materials Science (Physical Sciences)