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Numerical Simulation of Tunnel Diodes for Multi-junction Solar Cells by M. Hermle; G. Létay; S. P. Philipps; A. W. Bett is a Engineering article available to read on EtoBox.

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## Abstract This work presents efforts to simulate numerically the current voltage (IV) curve of a III–V based Esaki tunnel diode. Using a tunneling model, which takes into account the full nonlocality of the barrier, a good agreement between measured and simulated IV curves of a GaAs tunnel diode was achieved. The influence of a series resistance effect as well as the importance of trap assisted tunneling (TAT) could be shown. In addition, we present a two‐dimensional model of a III–V multi‐junction solar cell including the numerical model of the investigated Esaki tunnel diode. Copyright © 2008 John Wiley & Sons, Ltd.

Who reads Numerical Simulation of Tunnel Diodes for Multi-junction Solar Cells?

Author

M. Hermle; G. Létay; S. P. Philipps; A. W. Bett

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley (ISSN 1062-7995)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)