Can I read Penetration of Electronic States from Silicon Substrate Into Silicon Oxide on EtoBox?

Penetration of Electronic States from Silicon Substrate Into Silicon Oxide by K. Takahashi; M.B. Seman; K. Hirose; T. Hattori is a Materials Science article available to read on EtoBox.

What is Penetration of Electronic States from Silicon Substrate Into Silicon Oxide about?

The depth pro®ling of O 1s energy loss in silicon oxide near the SiO 2 /Si interface was performed using extremely small probing depth. As a result, the energy loss of O 1s photoelectrons with threshold energy of 3.5 eV was found. This value of 3.5 eV is much smaller than the SiO 2 bandgap of 9.0 eV, but quite close to direct interband transition at G point in energy band structure of silicon. This can be explained by considering the penetration of electronic states from silicon substrate into silicon oxide up to 0.6 nm from the interface. In addition, the penetrating depth is larger than the thickness of the compositional transition layer.

Who reads Penetration of Electronic States from Silicon Substrate Into Silicon Oxide?

Author

K. Takahashi; M.B. Seman; K. Hirose; T. Hattori

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

2002

Language

EN

Field

Materials Science (Physical Sciences)