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Bias Control in Double-Pinned STT-MRAM by 戴敏峯 is a document available to read on EtoBox.

What is Bias Control in Double-Pinned STT-MRAM about?

The document discusses the control of bias fields in double-pinned-layer magnetic tunnel junctions, which are crucial for spin-transfer torque magnetic random access memory (STT-MRAM). It highlights the significance of pinned layer stacks in enhancing device performance. The research was published in Advanced Electronic Materials on August 26, 2025.

Author

戴敏峯

Language

EN