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Can I read Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition on EtoBox?
Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition by Shulin Gu; Youdou Zheng; Rong Zhang; Ronghua Wang is a Physics and Astronomy article available to read on EtoBox.
What is Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition about?
A kinetics study of very low pressure chemical vapor deposition (VLPCVD) of SiGe alloys has been reported in this paper. In the kinetics model, SiGe alloy deposition process has been treated as consisting of three steps: Sill4 and GeH4 adsorption on Si and Ge vacancy sites, hydrogen exchange between silicon and germanium hydrides and hydrogen desorption from a growing surface. The kinetics model is fitted to the data of SiGe layers deposited from decomposition of Sill4 and GeH4 by rapid thermal process VLPCVD method.
Who reads Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Shulin Gu; Youdou Zheng; Rong Zhang; Ronghua Wang
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 1996
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)