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About this Engineering article
Al 0.45 Ga 0.55 As/GaAs HEMTs grown by MOVPE exhibiting high transconductance by Powell, A.L.; Mistry, P.; Roberts, J.S.; Rockett, P.I. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Powell, A.L.; Mistry, P.; Roberts, J.S.; Rockett, P.I.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1987
- Field
- Engineering (Physical Sciences)
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