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What is 650V GaN HEMT for 10kW Power Conversion about?

This document describes the development of a 650V/780A GaN power transistor. Key aspects include a cascode design with a GaN HEMT and low-voltage Si MOSFET, achieving high threshold voltage and low switching losses. In a 12kW converter test, the device achieved over 99% peak efficiency, demonstrating its suitability for high power applications.

Author

RobertoCarlosGiacchetta

Language

EN