About this scholarly article

2020 IEEE International Reliability Physics Symposium (IRPS) - Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs by Wang, Yang; Wang, Chen; Chen, Tao; Liu, Hao; Kuo, Chinte; Zhou, Ke; Yin, Binfeng; Chen, Lin; Sun, Qing-Qing is a scholarly article available to read on EtoBox.

Author

Wang, Yang; Wang, Chen; Chen, Tao; Liu, Hao; Kuo, Chinte; Zhou, Ke; Yin, Binfeng; Chen, Lin; Sun, Qing-Qing

Publisher

IEEE

Published

2020