About this scholarly article

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V by Zhang, Kai; Zhou, Jianjun; Kong, Cen; Kong, Yuechan; Chen, Tangsheng is a scholarly article available to read on EtoBox.

Author

Zhang, Kai; Zhou, Jianjun; Kong, Cen; Kong, Yuechan; Chen, Tangsheng

Publisher

IEEE

Published

2016