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Phase diagrams of the pseudo-binary systems of BaS–In2S3 and BaS–Ga2S3 by C. Hidaka; M. Goto; M. Kubo; T. Takizawa is a Engineering article available to read on EtoBox.

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Compounds in the IIa-III 2 -VI 4 system are expected as luminescent materials when doped with RE elements, and especially their single crystals are regarded as promising for variable-wavelength lasers in the visible region. However, except for (Ca, Sr) thiogallates, few reports concerning the single crystal growth have been published so far. Here, the pseudo-binary phase diagrams of the BaS-In 2 S 3 and the BaS-Ga 2 S 3 systems have been constructed for the first time, and based on them the single crystal growth of the compounds above has been performed. A eutectic reaction similar to that in the (Ca,Sr)S-Ga 2 S 3 systems was also found in both diagrams. The melting point of BaIn 2 S 4 is determined as 1062 1C, while that of BaGa 2 S 4 is too high (predicted as more than 1250 1C) to be measured in our apparatus. Among three possible compounds found in this study, i.e., BaIn 2 S 4 , BaGa 2 S 4 , and BaGa 4 S 7 , a single crystal of BaIn 2 S 4 has been successfully grown by the melt method using a specially devised carbon crucible for escaping from the big supercooling always observed at solidifying.

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Author

C. Hidaka; M. Goto; M. Kubo; T. Takizawa

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)