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About this Engineering article
Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance by Chen, Lin; Xu, Yan; Sun, Qing-Qing; Zhou, Peng; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chen, Lin; Xu, Yan; Sun, Qing-Qing; Zhou, Peng; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)