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Multislice simulation of high-resolution scanning transmission electron microscopy Z-contrast images of semiconductor heterointerfaces by B. Bollig; H.-G. Fischer; E. Kubalek is a Engineering article available to read on EtoBox.
What is Multislice simulation of high-resolution scanning transmission electron microscopy Z-contrast images of semiconductor heterointerfaces about?
## Abstract Multislice simulations of high‐resolution scanning transmission electron microscopy (STEM) Z‐contrast images have been used to investigate semiconductor heterointerfaces between ternary and binary semiconductors. As an example, the ZnSSe/ZnSe material system, which is of great interest for the development of blue semiconductor lasers, has been chosen. Two different models for the description of ternary semiconductors are compared, the thickness dependence and composition dependence of Z contrast are investigated, and the visibility of important interface structures in Z‐contrast micrographs is discussed. By comparison with experimental high resolution (∼ 0.21 nm) Z‐contrast micrographs, it is demonstrated how image simulation can facilitate the interpretation of experimental Z‐contrast micrographs.
Who reads Multislice simulation of high-resolution scanning transmission electron microscopy Z-contrast images of semiconductor heterointerfaces?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- B. Bollig; H.-G. Fischer; E. Kubalek
- Publisher
- Hindawi Limited; Wiley (ISSN 0161-0457)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)