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**Bipolar Power Transistors for Switching Power Supplies**Using a crystal mesh pattern, Toshiba has reduced the storage time (tstg) and fall time (tf) of 400-V and 800-V power transistors for switching power supplies. In addition, we have developed power transistors in a low-profile package. These types of transistor are suitable for low-output AC adapters and ballast lamp applications. **Bipolar Power Transistors for Audio Power Amplifiers**Using a minute pattern and a high-density MET design, Toshiba has chieved high levels of current efficiency. Package type can be selected to yield collector power output ranging from 60 W to 220 W. A wide selection of packages, including the TO-3P(N) and TO-3P(L), is available. **Bipolar Power Transistors SMD Series**With smaller and thinner electronic devices fuelling demand for SMD-type power transistors, Toshiba provides the following packages to meet manufacturers' needs.PW-Mini PW-MoldTSM VS-6 PS-8 SMV **Low-VCE(sat) Bipolar Transistor Series**Toshiba power transistors feature a Vceo of 10 V to 100 V and an Ic of 1 A to 7 A, with various surface-mount packages. Ultra-high-speed switching transistors and transistors with an SBD or S-MOS are

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Language

RU

Category

nonfiction

Subjects

Technology, Electronics, Stem