Opening book details…
Can I read Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics on EtoBox?
Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics by C.H. Liu; H.W. Chen is a Engineering article available to read on EtoBox.
What is Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics about?
Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposition (ALD) HfZrLaO high-j gate dielectric were fabricated and investigated. The equivalent oxide thickness (EOT) is 0.68 nm and the gate leakage current density (J g ) is only 9.3 Â 10 À1 A/cm 2 . The time-dependence dielectric breakdown (TDDB) behavior agrees with the percolation model, and the TDDB characteristics are consistent with the thermochemical E-model for lifetime projection. The experimental results show that the Weibull slopes are almost independent of capacitor area and stress conditions. The field acceleration parameter (c) and activation energy (DH 0 ) are determined around 5.9-7.0 cm/MV and 0.54-0.60 eV, respectively. At 85 °C, the maximum voltage projected for 10-years TDDB lifetime is 1.87 V.
Who reads Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C.H. Liu; H.W. Chen
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)