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About this Engineering article
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices by Okamoto, Mitsuo; Iijima, Miwako; Yatsuo, Tsutomu; Fukuda, Kenji; Okumura, Hajime is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Okamoto, Mitsuo; Iijima, Miwako; Yatsuo, Tsutomu; Fukuda, Kenji; Okumura, Hajime
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)
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