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About this Physics and Astronomy article
Influence of dislocations and annealing cap on the electrical activation of silicon implanted in semi-insulating GaAs: Implications for field-effect transistors by Morrow, Richard A. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Morrow, Richard A.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1988
- Field
- Physics and Astronomy (Physical Sciences)