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About this Physics and Astronomy article
Growth rates of dry thermal oxidation of 4H-silicon carbide by Šimonka, V.; Hössinger, A.; Weinbub, J.; Selberherr, S. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Šimonka, V.; Hössinger, A.; Weinbub, J.; Selberherr, S.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2016
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
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