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About this Engineering article
Pressure behavior of Te isoelectronic centers in ZnS:Te by Fang, Z. L.; Su, F. H.; Ma, B. S.; Ding, K.; Han, H. X.; Li, G. H.; Sou, I. K.; Ge, W. K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Fang, Z. L.; Su, F. H.; Ma, B. S.; Ding, K.; Han, H. X.; Li, G. H.; Sou, I. K.; Ge, W. K.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2002
- Field
- Engineering (Physical Sciences)