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About this Materials Science article
Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition by Wei Zhang,Ji-Zhou Kong,Zheng-Yi Cao,Ai-Dong Li... is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Wei Zhang,Ji-Zhou Kong,Zheng-Yi Cao,Ai-Dong Li...
- Publisher
- Springer-Verlag; Springer (Biomed Central Ltd.); Springer Verlag; Seacaucus NJ: Springer Verlag New York, 2006-; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 1931-7573)
- Published
- 2017
- Field
- Materials Science (Physical Sciences)
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